Utilizing large hall offset voltage for conversion free 4H-SiC strain sensor

Nguyen, Tuan-Khoa and Phan, Hoang-Phuong and Han, Jisheng and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Foisal, Abu Riduan Md and Zhu, Yong and Nguyen, Nam-Trung and Dao, Dzung Viet (2018) Utilizing large hall offset voltage for conversion free 4H-SiC strain sensor. In: 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2018), 21 Jan - 25 Jan 2018, Belfast, NORTH IRELAND.


This work presents a conversion free p-type 4H silicon carbide (4H-SiC) four-terminal strain sensor utilizing a large Hall offset voltage in a symmetric four-terminal configuration. Upon the application of mechanical strain, a high sensitivity of 209 mV/A/ppm was obtained. The strain sensor also exhibited good repeatability and linearity with a significantly large offset voltage in the induced strain ranging from 0 to 334ppm. Coupled these performances with the excellent mechanical strength, electrical conductivity, thermal stability, and chemical inertness of the SiC material, the proposed 4H-SiC strain sensor is promising for stress/strain monitoring for harsh operating environments with high signal-to-noise ratio.

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Item Type: Conference or Workshop Item (Commonwealth Reporting Category E) (Paper)
Refereed: Yes
Item Status: Live Archive
Additional Information: Files associated with this item cannot be displayed due to copyright restrictions.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 17 Jun 2022 00:15
Last Modified: 24 Jun 2022 02:21
Uncontrolled Keywords: 4H silicon carbide; Chemical inertness; Electrical conductivity; High sensitivity; High signal-to-noise ratio; Mechanical strain; Operating environment; Strain sensors
Fields of Research (2020): 40 ENGINEERING > 4017 Mechanical engineering > 401705 Microelectromechanical systems (MEMS)
Socio-Economic Objectives (2020): 28 EXPANDING KNOWLEDGE > 2801 Expanding knowledge > 280110 Expanding knowledge in engineering
Identification Number or DOI: https://doi.org/10.1109/MEMSYS.2018.8346697
URI: http://eprints.usq.edu.au/id/eprint/49112

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