Giant Piezotronic Effect by Photoexcitation–Electronic Coupling in a p-GaN/AlGaN/GaN Heterojunction

Nguyen, Hong Quan and Foisal, Riduan and Tanner, Philip and Nguyen, Tuan Hung and Aberoumand, Sadegh and Dau, Van Thanh and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Dimitrijev, Sima and Phan, Hoang Phuong and Nguyen, Nam-Trung and Dao, Viet Dzung (2022) Giant Piezotronic Effect by Photoexcitation–Electronic Coupling in a p-GaN/AlGaN/GaN Heterojunction. ACS Applied Electronic Materials.


Abstract

The incorporation of multiphysics stimuli with traditional sensing effects results in an approach for increasing the sensitivity of mechanical sensors, in particular strain sensing. This paper reports on the giant piezotronic effect in a p-GaN/AlGaN/GaN heterojunction coupled with UV illumination and tuning current that can reach a strain sensitivity of as high as 70680. In comparison to an identical configuration without coupling, this value represents a 100-fold improvement. This sensitivity is one of the greatest for the piezotronic effect in semiconductors that have been documented to date. The intensification of the piezotronic effect in the p-GaN/AlGaN/GaN heterojunctions was ascribed to the formation of a carrier concentration gradient in the AlGaN and GaN layers under UV illumination coupled with the potential-balancing effect by a tuning current. In addition, the result showed a significant improvement in repeatability, stability, and detectable range of the strain sensor utilizing this phenomenon. The ultrahigh sensitivity strain sensing technique will open the way for the establishment of mechanical sensors that are tremendously sensitive, trustworthy, and efficient.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Files associated with this item cannot be displayed due to copyright restrictions.
Faculty/School / Institute/Centre: Current – Faculty of Health, Engineering and Sciences - School of Engineering (1 Jan 2022 -)
Faculty/School / Institute/Centre: Current - Institute for Advanced Engineering and Space Sciences - Centre for Future Materials (1 Jan 2017 -)
Date Deposited: 16 Jun 2022 23:07
Last Modified: 16 Jun 2022 23:07
Uncontrolled Keywords: wide-band-gap semiconductor; piezotronic effect; normally off HEMT; AlGaN/GaN heterostructure; photoexcitation
Fields of Research (2020): 40 ENGINEERING > 4017 Mechanical engineering > 401705 Microelectromechanical systems (MEMS)
Socio-Economic Objectives (2020): 28 EXPANDING KNOWLEDGE > 2801 Expanding knowledge > 280110 Expanding knowledge in engineering
Identification Number or DOI: https://doi.org/10.1021/acsaelm.2c00111
URI: http://eprints.usq.edu.au/id/eprint/49105

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