Piezoresistive effect with a gauge factor of 18 000 in a semiconductor heterojunction modulated by bonded light-emitting diodes

Nguyen, Thanh and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Dau, Van Thanh and Foisal, Abu Riduan Md and Guzman, Pablo and Nguyen, Hung and Pham, Tuan Anh and Nguyen, Tuan-Khoa and Phan, Hoang- Phuong and Nguyen, Nam-Trung and Dao, Dzung Viet (2021) Piezoresistive effect with a gauge factor of 18 000 in a semiconductor heterojunction modulated by bonded light-emitting diodes. ACS Applied Materials and Interfaces, 13 (29). pp. 35046-35053. ISSN 1944-8244


Giant piezoresistive effect enables the development of ultrasensitive sensing devices to address the increasing demands from hi-tech applications such as space exploration and self-driving cars. The discovery of the giant piezoresistive effect by optoelectronic coupling leads to a new strategy for enhancing the sensitivity of mechanical sensors, particularly with light from light-emitting diodes (LEDs). This paper reports on the piezoresistive effect in a 3C-SiC/Si heterostructure with a bonded LED that can reach a gauge factor (GF) as high as 18 000. This value represents an approximately 1000 times improvement compared to the configuration without a bonded LED. This GF is one of the highest GFs reported to date for the piezoresistive effect in semiconductors. The generation of carrier concentration gradient in the top thin 3C-SiC film under illumination from the LED coupling with the tuning current contributes to the modulation of the piezoresistive effect in a 3C-SiC/Si heterojunction. In addition, the feasibility of using different types of LEDs as the tools for modulating the piezoresistive effect is investigated by evaluating lateral photovoltage and photocurrent under LED’s illumination. The generated lateral photovoltage and photocurrent are as high as 14 mV and 47.2 μA, respectively. Recent technologies for direct bonding of micro-LEDs on a Si-based device and the discovery reported here may have a significant impact on mechanical sensors.

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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Published online: 29 March 2021. Permanent restricted access to ArticleFirst version, in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Faculty/School / Institute/Centre: Current - Institute for Advanced Engineering and Space Sciences - Centre for Future Materials (1 Jan 2017 -)
Date Deposited: 15 Jul 2021 01:59
Last Modified: 27 Oct 2021 03:23
Uncontrolled Keywords: piezoresistive effect, piezoresistance, piezoresistive sensors, light-emitting diode, bonding technique
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Fields of Research (2020): 40 ENGINEERING > 4017 Mechanical engineering > 401705 Microelectromechanical systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering
Socio-Economic Objectives (2020): 28 EXPANDING KNOWLEDGE > 2801 Expanding knowledge > 280110 Expanding knowledge in engineering
Funding Details:
Identification Number or DOI: https://doi.org/10.1021/acsami.1c05985
URI: http://eprints.usq.edu.au/id/eprint/42747

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