AlGaN/GaN 2-D electron gas for highly sensitive and high-temperature current sensing

Nguyen, Hong Quan and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Moghadam, Hamid Amini and Nguyen, Tuan Khoa and Nguyen, Thanh and Han, Jisheng and Dimitrijev, Sima and Zhu, Yong and Nguyen, Nam-Trung and Dao, Dzung Viet (2021) AlGaN/GaN 2-D electron gas for highly sensitive and high-temperature current sensing. IEEE Transactions on Electron Devices, 68 (4):9360320. pp. 1495-1500. ISSN 0018-9383


Abstract

This article presents the design and characterization of a direct current (dc) sensor utilizing the Hall effect in AlGaN/GaN 2-D electron gas (2DEG) four-terminal devices and a flux concentrator. The sensor was fabricated from an AlGaN/GaN/Si wafer grown by metal-organic chemical vapor deposition. The sensor exhibited excellent linearity and repeatability with a high Hall voltage under the primary current ranging from −5 to 5 A. The sensitivity of the sensor was measured to be 0.26 (V/A)/A at 20 °C and independent of ambient temperature up to 200 °C. The obtained result is greater than that of other reported Hall effect-based current sensors. The high sensitivity and thermal stability at varying temperatures are attributed to the high electron mobility, wide bandgap, and stability of carrier density in 2DEG. Combining these factors with the excellent mechanical strength, electrical conductivity, and chemical inertness of GaN, the proposed sensor is promising for current monitoring in a wide range of operation temperatures.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Permanent restricted access to Published version, in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Date Deposited: 06 Apr 2021 05:16
Last Modified: 22 Sep 2021 02:04
Uncontrolled Keywords: AlGaN/GaN 2-D electron gas (2DEG), current sensor, energy band analysis, Hall effect
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Fields of Research (2020): 40 ENGINEERING > 4017 Mechanical engineering > 401705 Microelectromechanical systems (MEMS)
Socio-Economic Objectives (2020): 28 EXPANDING KNOWLEDGE > 2801 Expanding knowledge > 280110 Expanding knowledge in engineering
Identification Number or DOI: https://doi.org/10.1109/TED.2021.3054360
URI: http://eprints.usq.edu.au/id/eprint/41674

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