Wet oxidation of 3C-SiC on Si for MEMS processing and use in harsh environments: Effects of the film thicknesses, crystalline orientations, and growth temperatures

Pham, Tuan Anh and Hold, Leonie and Iacopi, Alan and Nguyen, Tuan-Khoa and Cheng, Han Hao and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Dao, Dzung Viet and Ta, Hang Thu and Nguyen, Nam-Trung and Phan, Hoang‐Phuong (2021) Wet oxidation of 3C-SiC on Si for MEMS processing and use in harsh environments: Effects of the film thicknesses, crystalline orientations, and growth temperatures. Sensors and Actuators A: Physical, 317:112474. pp. 1-11. ISSN 0924-4247


An in-depth understanding of the formation of silicon dioxide (SiO2) on silicon carbide (SiC) in thermal oxidation is imperative for micro/nano fabrication processes, integration of electronic components, and evaluation of SiC device performance under extreme conditions. Herein, we report a comprehensive study on the effects of crystalline orientations, thicknesses, and growth temperatures of cubic SiC films on their wet oxidation properties. The oxidation rate and surface morphology were characterized using atomic force microscopy (AFM) and light reflectance measurement systems. Our experimental results revealed the role of defects in the SiC crystal on the oxidation that relates to SiC thickness, deposition conditions, crystal orientation and temperature of wet oxidation. Critically, the electrical properties of SiC films oxidized at 900 °C remained the same as the unoxidized film as confirmed by room-temperature current-voltage measurements, indicating a long-term service temperature of SiC. These findings are expected to provide crucial information on the effects of defects on the formation of SiO2 on SiC films at different oxidation temperatures, which is highly essential for establishing a basic platform for the fabrication of high-performance SiC-based electronic devices.

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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Faculty/School / Institute/Centre: Historic - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 - 31 Dec 2021)
Faculty/School / Institute/Centre: Current - Institute for Advanced Engineering and Space Sciences - Centre for Future Materials (1 Jan 2017 -)
Date Deposited: 21 Jan 2021 06:18
Last Modified: 22 Jun 2021 11:03
Uncontrolled Keywords: MEMS; Wet oxidation; Silicon carbide; Epitaxial growth; Harsh environments
Fields of Research (2008): 02 Physical Sciences > 0204 Condensed Matter Physics > 020499 Condensed Matter Physics not elsewhere classified
Fields of Research (2020): 40 ENGINEERING > 4017 Mechanical engineering > 401705 Microelectromechanical systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970102 Expanding Knowledge in the Physical Sciences
Identification Number or DOI: https://doi.org/10.1016/j.sna.2020.112474
URI: http://eprints.usq.edu.au/id/eprint/40563

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