Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0 0 0 1)

Shi, Xiaolei ORCID: https://orcid.org/0000-0003-0905-2547 and Pan, Guoshun and Zhou, Yan and Gu, Zhonghua and Gong, Hua and Zou, Chunli (2014) Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0 0 0 1). Applied Surface Science, 307. pp. 414-427. ISSN 0169-4332


Abstract

In this paper, a detailed analysis is presented to characterize the performance of colloidal silica abrasives based slurry with different abrasive sizes on CMP of hexagonal 4H-SiC wafer, and indicates that the abrasive size is an important factor to determine the efficiency of CMP and the final planarization quality of wafer surface. The authors also present a detailed hypothesis to describe the material removal mechanism of 4H-SiC by colloidal silica abrasives during CMP process, and design two groups of experiments to demonstrate the rationality of the hypothesis. Furthermore, the authors put forward some suggestions to optimize the CMP efficiency and planarization quality of 4H-SiC wafer.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Permanent restricted access to Publ8ihsed version in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 15 Sep 2020 04:48
Last Modified: 15 Sep 2020 04:48
Uncontrolled Keywords: silicon carbide; chemical–mechanical polishing; colloidal silica abrasives; step-terrace structure; material removal mechanism
Fields of Research (2008): 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials
Identification Number or DOI: 10.1016/j.apsusc.2014.04.048
URI: http://eprints.usq.edu.au/id/eprint/38916

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