Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with different abrasives

Zou, Chunli and Pan, Guoshun and Shi, Xiaolei ORCID: https://orcid.org/0000-0003-0905-2547 and Gong, Hua and Zhou, Yan (2014) Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with different abrasives. Proceedings of the Institution of Mechanical Engineers, Part J: Journal of Engineering Tribology, 228 (10). pp. 1144-1150. ISSN 1350-6501


Abstract

For chemical-mechanical polishing of epitaxial gallium nitride (GaN), a two-step experiment method with two kinds of abrasives, aluminum oxide (Al2O3) and colloidal silica (SiO2), was put forward. The average material removal rates of GaN by the slurry with Al2O3 and SiO2 abrasives were 594.79 and 66.88 nm/h, respectively. An atomically flat surface with roughness (Ra) of 0.056 nm was obtained after the second chemical-mechanical polishing process with SiO2-based slurry, which presented an atomic step-terrace structure. The material removal characteristics of GaN surfaces were investigated in detail. A model was proposed to describe the different behaviors of the two kinds of abrasive during chemical-mechanical polishing process.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Permanent restricted access to Published version in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 16 Sep 2020 01:39
Last Modified: 16 Sep 2020 02:49
Uncontrolled Keywords: GaN, chemical mechanical polishing, surface roughness, removal rate
Fields of Research (2008): 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials
URI: http://eprints.usq.edu.au/id/eprint/38915

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