XPS, UV–vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing (CMP)

Zhou, Yan and Pan, Guoshun and Shi, Xiaolei ORCID: https://orcid.org/0000-0003-0905-2547 and Xu, Li and Zou, Chunli and Gong, Hua and Luo, Guihai (2014) XPS, UV–vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing (CMP). Applied Surface Science, 316 (1). pp. 643-648. ISSN 0169-4332


Abstract

Chemical mechanical polishing (CMP) removal mechanisms of on-axis Si-face SiC wafer have been investigated through X-ray photoelectron spectroscopy (XPS), UV–visible (UV–vis) spectroscopy and atomic force microscopy (AFM). XPS results indicate that silicon oxide is formed on Si-face surface polished by the slurry including oxidant H2O2, but not that after immersing in H2O2 solution. UV–vis spectroscopy curves prove that •OH hydroxyl radical could be generated only under CMP polishing by the slurry including H2O2 and abrasive, so as to promote oxidation of Si-face to realize the effective removal; meanwhile, alkali KOH during CMP could induce the production of more radicals to improve the removal. On the other side, ultra-smooth polished surface with atomic step structure morphology and extremely low Ra of about 0.06 nm (through AFM) is obtained using the developed slurry with silica nanoparticle abrasive. Through investigating the variations of the atomic step morphology on the surface polished by different slurries, it's reveals that CMP removal mechanism involves a simultaneous process of surface chemical reaction and nanoparticle atomic scale abrasion.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Permanent restricted access to Published version in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 15 Sep 2020 04:57
Last Modified: 15 Sep 2020 04:57
Uncontrolled Keywords: silicon carbide; chemical mechanical polishing; removal; XPS; UV–vis; atomic step structurea
Fields of Research (2008): 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials
Identification Number or DOI: 10.1016/j.apsusc.2014.08.011
URI: http://eprints.usq.edu.au/id/eprint/38914

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