Realization of atomic-level smooth surface of sapphire (0001) by chemical-mechanical planarization with nano colloidal silica abrasives

Shi, Xiaolei ORCID: https://orcid.org/0000-0003-0905-2547 and Pan, Guoshun and Zhou, Yan and Liu, Yuhong (2015) Realization of atomic-level smooth surface of sapphire (0001) by chemical-mechanical planarization with nano colloidal silica abrasives. In: 11th International Conference on Planarization/CMP Technology (ICPT 2014), 19-21 Nov 2014, Kobe, Japan.


Abstract

In this paper, an innovative study is presented to characterize the chemical-mechanical planarization (CMP) performance on hexagonal sapphire (0001) wafer surface by using colloidal silica (SiO 2 ) abrasives based slurry with two different particle sizes, which indicates that the value of abrasive size is an important factor to determine the efficiency of CMP and the final planarization quality of wafer surface. The nano SiO 2 abrasives used in this study could perfectly optimize the quality of surface roughness. Furthermore, the authors put forward some suggestions to optimize the CMP efficiency and planarization quality of sapphire wafer.


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Item Type: Conference or Workshop Item (Commonwealth Reporting Category E) (Paper)
Refereed: Yes
Item Status: Live Archive
Additional Information: Permanent restricted access to Published version + Front Matter in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 17 Sep 2020 00:03
Last Modified: 09 Oct 2020 05:06
Uncontrolled Keywords: abrasives, rough surfaces, surface roughness, planarization, surface topography, slurries
Fields of Research (2008): 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials
Identification Number or DOI: https://doi.org/10.1109/ICPT.2014.7017292
URI: http://eprints.usq.edu.au/id/eprint/38913

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