The effects of ultra-smooth surface atomic step morphology on CMP performances of sapphire and SiC wafers

Zhou, Yan and Pan, Guoshun and Shi, Xiaolei ORCID: and Zou, Chunli and Gong, Hua and Xu, Li and Luo, Guihai (2015) The effects of ultra-smooth surface atomic step morphology on CMP performances of sapphire and SiC wafers. In: 11th International Conference on Planarization/CMP Technology (ICPT 2014), 19-21 Nov 2014, Kobe, Japan.


Whether sapphire or SiC wafer, clear and regular atomic step morphology could be observed all over the ultra-smooth wafer surface via atomic force microscopy (AFM) using our CMP technology. However, towards sapphire and SiC wafers, the variations of atomic step widths and step directions on the whole of wafer surface are different. The step widths and step directions on the different positions of sapphire wafer are uniform, while that on SiC wafer are distinct. Thus, the effects of atomic step width on CMP removal rate of sapphire and SiC wafers were studied. On the other side, the CMP removal model of super-hard hexagonal crystalline wafer to realize atomically ultra-smooth surface is proposed. The variations of atomic step morphology towards different defects on sapphire and SiC wafers surface are analyzed, and the formation mechanism of the defects is discussed.

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Item Type: Conference or Workshop Item (Commonwealth Reporting Category E) (Paper)
Refereed: Yes
Item Status: Live Archive
Additional Information: Permanent restricted access to Published version + Front Matter in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 17 Sep 2020 00:13
Last Modified: 09 Oct 2020 05:06
Uncontrolled Keywords: atomic force microscopy; sapphire; silicon carbide; silicon compounds
Fields of Research (2008): 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials
Fields of Research (2020): 40 ENGINEERING > 4016 Materials engineering > 401605 Functional materials
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