Zou, Chunli and Pan, Guoshun and Xu, Li and Shi, Xiaolei 
ORCID: https://orcid.org/0000-0003-0905-2547 and Liu, Yuyu
(2015)
CMP of GaN using sulfate radicals generated by metal catalyst.
In: 11th International Conference on Planarization/CMP Technology (ICPT 2014), 19-21 Nov 2014, Kobe, Japan.
Abstract
A method for preparing atomically smooth gallium nitride (GaN) surface with high material removal rate that involves chemical mechanical polishing with sulfate radical (SO 4 - ) oxidizer and Fe 2+ activator in slurry is presented. The results indicate that complexing agent with Fe 2+ activator is the key point to obtain atomically smooth GaN surface and higher removal rate of GaN. Atomic force microscope (AFM) shows that the average surface roughness (Ra) is 0.0601nm.
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| Item Type: | Conference or Workshop Item (Commonwealth Reporting Category E) (Paper) |
|---|---|
| Refereed: | Yes |
| Item Status: | Live Archive |
| Additional Information: | Permanent restricted access to Published version + Front Matter in accordance with the copyright policy of the publisher. |
| Faculty/School / Institute/Centre: | No Faculty |
| Faculty/School / Institute/Centre: | No Faculty |
| Date Deposited: | 17 Sep 2020 00:13 |
| Last Modified: | 09 Oct 2020 05:05 |
| Uncontrolled Keywords: | atomic force microscopy; catalysts; chemical mechanical polishing; III-V semiconductors; sulfur compounds; surface roughness |
| Fields of Research (2008): | 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials |
| Fields of Research (2020): | 40 ENGINEERING > 4016 Materials engineering > 401605 Functional materials |
| Identification Number or DOI: | https://doi.org/10.1109/ICPT.2014.7017290 |
| URI: | http://eprints.usq.edu.au/id/eprint/38910 |
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