CMP of GaN using sulfate radicals generated by metal catalyst

Zou, Chunli and Pan, Guoshun and Xu, Li and Shi, Xiaolei ORCID: https://orcid.org/0000-0003-0905-2547 and Liu, Yuyu (2015) CMP of GaN using sulfate radicals generated by metal catalyst. In: 11th International Conference on Planarization/CMP Technology (ICPT 2014), 19-21 Nov 2014, Kobe, Japan.


Abstract

A method for preparing atomically smooth gallium nitride (GaN) surface with high material removal rate that involves chemical mechanical polishing with sulfate radical (SO 4 - ) oxidizer and Fe 2+ activator in slurry is presented. The results indicate that complexing agent with Fe 2+ activator is the key point to obtain atomically smooth GaN surface and higher removal rate of GaN. Atomic force microscope (AFM) shows that the average surface roughness (Ra) is 0.0601nm.


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Item Type: Conference or Workshop Item (Commonwealth Reporting Category E) (Paper)
Refereed: Yes
Item Status: Live Archive
Additional Information: Permanent restricted access to Published version + Front Matter in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 17 Sep 2020 00:13
Last Modified: 09 Oct 2020 05:05
Uncontrolled Keywords: atomic force microscopy; catalysts; chemical mechanical polishing; III-V semiconductors; sulfur compounds; surface roughness
Fields of Research (2008): 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials
Fields of Research (2020): 40 ENGINEERING > 4016 Materials engineering > 401605 Functional materials
Identification Number or DOI: https://doi.org/10.1109/ICPT.2014.7017290
URI: http://eprints.usq.edu.au/id/eprint/38910

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