Effects of Silica Abrasive Size on Sapphire CMP Performances and Their Removal Mechanisms

Zhou, Yan and Pan, Guoshun and Shi, Xiaolei ORCID: https://orcid.org/0000-0003-0905-2547 and Gong, Hua and Zou, Chunli and Xu, Li (2016) Effects of Silica Abrasive Size on Sapphire CMP Performances and Their Removal Mechanisms. In: 2015 International Conference on Planarization/CMP Technology (ICPT 2015), 30 Sept -2 Oct, 2015, Chandler, United States.


Abstract

The effects of silica abrasive size on sapphire CMP performances have been studied. We find that MRR by 10 nm silica slurry could appear rather high, approaching to two thirds of that by 100 nm silica slurry. The removal mechanisms of sapphire using different sizes silica have been investigated using atomic force microscopy (AFM) measurements through observing the variations of atomic step morphology on the wafer surface.


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Item Type: Conference or Workshop Item (Commonwealth Reporting Category E) (Paper)
Refereed: Yes
Item Status: Live Archive
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 27 Aug 2020 04:26
Last Modified: 09 Oct 2020 07:32
Uncontrolled Keywords: silica abrasive size; sapphire; Chemical Mechanical Polishing (CMP)
Fields of Research (2008): 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials
URI: http://eprints.usq.edu.au/id/eprint/38909

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