Zhou, Yan and Pan, Guoshun and Shi, Xiaolei 
ORCID: https://orcid.org/0000-0003-0905-2547 and Zhang, Suman and Gong, Hua and Luo, Guihai
(2015)
Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers.
Tribology International, 87.
pp. 145-150.
ISSN 0301-679X
Abstract
Towards sapphire and SiC wafer, clear and regular atomic step morphology could be observed all-over the surface via AFM. However, the variations of atomic step widths and step directions are different on the whole of different wafer surfaces: that on sapphire wafer are uniform, while that on SiC wafer are distinct. The effects of atomic step width on removal rate are studied. Removal model of super-hard wafer to realize atomically ultra-smooth surface is proposed. The variations of atomic step morphology toward different defects on sapphire and SiC wafers surface are analyzed, and the formation mechanism is discussed.
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| Item Type: | Article (Commonwealth Reporting Category C) |
|---|---|
| Refereed: | Yes |
| Item Status: | Live Archive |
| Additional Information: | Permanent restricted access to Published version in accordance with the copyright policy of the publisher. |
| Faculty/School / Institute/Centre: | No Faculty |
| Faculty/School / Institute/Centre: | No Faculty |
| Date Deposited: | 16 Sep 2020 01:38 |
| Last Modified: | 16 Sep 2020 02:28 |
| Uncontrolled Keywords: | chemical mechanical polishing; sapphire; silicon carbide; atomic step |
| Fields of Research (2008): | 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials |
| Fields of Research (2020): | 40 ENGINEERING > 4016 Materials engineering > 401605 Functional materials |
| Identification Number or DOI: | https://doi.org/10.1016/j.triboint.2015.02.013 |
| URI: | http://eprints.usq.edu.au/id/eprint/38907 |
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