Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers

Zhou, Yan and Pan, Guoshun and Shi, Xiaolei ORCID: https://orcid.org/0000-0003-0905-2547 and Zhang, Suman and Gong, Hua and Luo, Guihai (2015) Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers. Tribology International, 87. pp. 145-150. ISSN 0301-679X


Abstract

Towards sapphire and SiC wafer, clear and regular atomic step morphology could be observed all-over the surface via AFM. However, the variations of atomic step widths and step directions are different on the whole of different wafer surfaces: that on sapphire wafer are uniform, while that on SiC wafer are distinct. The effects of atomic step width on removal rate are studied. Removal model of super-hard wafer to realize atomically ultra-smooth surface is proposed. The variations of atomic step morphology toward different defects on sapphire and SiC wafers surface are analyzed, and the formation mechanism is discussed.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Permanent restricted access to Published version in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 16 Sep 2020 01:38
Last Modified: 16 Sep 2020 02:28
Uncontrolled Keywords: chemical mechanical polishing; sapphire; silicon carbide; atomic step
Fields of Research (2008): 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials
Fields of Research (2020): 40 ENGINEERING > 4016 Materials engineering > 401605 Functional materials
Identification Number or DOI: https://doi.org/10.1016/j.triboint.2015.02.013
URI: http://eprints.usq.edu.au/id/eprint/38907

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