Atomically smooth gallium nitride surface prepared by chemical mechanical polishing with S2O8 2−-Fe2+ based slurry

Shi, Xiao-Lei ORCID: https://orcid.org/0000-0003-0905-2547 and Zou, Chunli and Pan, Guoshun and Gong, Hua and Xu, Li and Zhou, Yan (2016) Atomically smooth gallium nitride surface prepared by chemical mechanical polishing with S2O8 2−-Fe2+ based slurry. Tribology International, 110. pp. 441-450. ISSN 0301-679X

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Abstract

In this paper, a significant improvement of chemical-mechanical polishing on gallium nitride with S2O82−-Fe2+ based slurry is presented in detail. The results indicate that the S2O82−-Fe2+ additives possessed obvious effect to enhance the polishing efficiency of GaN, and successfully achieved good surface quality after polishing. The addition of complexing agent obviously improves the stability of catalytic system. Besides, we also studied the special change rule of atomic step-terrace topography from the surface of GaN to describe the material removal mechanism during CMP process. The results show that the removal of materials by CMP follows rigid rules, which may help to improve the material removal mechanism of CMP.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 24 Jul 2020 00:03
Last Modified: 09 Oct 2020 07:33
Uncontrolled Keywords: Gallium nitride; Chemical-mechanical polishing; S2O82−-Fe2+ additive; Step-terrace structure; Material removal mechanism
Fields of Research (2008): 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials
Identification Number or DOI: https://doi.org/10.1016/j.triboint.2016.09.037
URI: http://eprints.usq.edu.au/id/eprint/38900

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