A synergy of strain loading and laser radiation in determining the high-performing electrical transports in the single Cu-doped SnSe microbelt

Zheng, Yunzhi and Shi, Xiao-Lei ORCID: https://orcid.org/0000-0003-0905-2547 and Yuan, Hualei and Lu, Siyu and Qu, Xianlin and Liu, Wei-Di and Wang, Lihua and Zheng, Kun and Zou, Jin and Chen, Zhi-Gang ORCID: https://orcid.org/0000-0002-9309-7993 (2020) A synergy of strain loading and laser radiation in determining the high-performing electrical transports in the single Cu-doped SnSe microbelt. Materials Today Physics, 13:100198. ISSN 2542-5293

[img]
Preview
Text (Accepted Version)
01 - 20200220 - A Synergy of Strain Loading and Laser Radiation.pdf
Available under License Creative Commons Attribution Non-commercial No Derivatives 4.0.

Download (4MB) | Preview

Abstract

Semiconducting microbelts are key components of the thermoelectric micro-devices, and their electrical transport properties play significant roles in determining the thermoelectric performance. Here, we report heavily Cu-doped single-crystal SnSe microbelts as potential candidates employed in thermoelectric micro-devices, fabricated by a facile solvothermal route. The considerable Cu-doping concentration of ~11.8 % up to the solubility contributes to a high electrical conductivity of ~416.6 S m-1 at room temperature, improved by one order of magnitude compared with pure SnSe (38.0 S m-1). Meanwhile, after loading ~1 % compressive strain and laser radiation, the electrical conductivity can be further improved to ~601.9 S m-1 and ~589.2 S m-1, respectively, indicating great potentials for applying to thermoelectric micro-devices. Comprehensive structural and compositional characterizations indicate that the Cu+ doping state provides more hole carriers into the system, contributing to the outstanding electrical conductivity. Calculations based on first-principle density functional theory reveal that the heavily doped Cu lowers the Fermi level down into the valence bands, generating holes, and the 1 % strain can further reduce the bandgap, strengthening the ability to release holes, and, in turn, leading to such an excellent electrical transport performance. This study fills the gaps of finding novel materials as potential candidates employed in the thermoelectric micro-devices and provides new ideas for micro/nanoscale thermoelectric material design.


Statistics for USQ ePrint 38334
Statistics for this ePrint Item
Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: © 2020 Elsevier Ltd. All rights reserved.
Faculty/School / Institute/Centre: Current - Institute for Advanced Engineering and Space Sciences - Centre for Future Materials (1 Jan 2017 -)
Faculty/School / Institute/Centre: Current - Institute for Advanced Engineering and Space Sciences - Centre for Future Materials (1 Jan 2017 -)
Date Deposited: 01 Jul 2020 03:56
Last Modified: 27 Jul 2020 00:53
Uncontrolled Keywords: tin selenide; electrical transport performance; Cu-doping; strain loading; laser radiation
Fields of Research (2008): 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials
Identification Number or DOI: 10.1016/j.mtphys.2020.100198
URI: http://eprints.usq.edu.au/id/eprint/38334

Actions (login required)

View Item Archive Repository Staff Only