Electrical properties of p-type 3C-SiC/Si heterojunction diode under mechanical stress

Qamar, Afzaal and Tanner, Philip and Dao, Dzung Viet and Phan, Hoang-Phuong and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 (2014) Electrical properties of p-type 3C-SiC/Si heterojunction diode under mechanical stress. IEEE Electron Device Letters, 35 (12):6932451. pp. 1293-1295. ISSN 0741-3106


Abstract

The current mechanism and effects of external transverse stress in the [110] orientation on the electrical properties of a single crystal (100) p-3C-SiC/p-Si heterojunction diode are reported for the first time. It has been observed that the current flow in the heterojunction is due to tunneling through the triangular potential barrier formed due to valence band offset between Si and SiC. The applied stress produces small changes in tunneling current when stress is increased from 0 to 308 MPa. The observed increase in current at 0.24 V is 10% at maximum stress of 308 MPa. The increase of tunneling current when applying stress is explained in terms of stress, which alters the out-of-plane effective mass, and the effective tunneling barrier height of holes in top subbands of p-type Si.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Permanent restricted access to Published version, in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 01 May 2020 04:09
Last Modified: 01 May 2020 04:09
Uncontrolled Keywords: p-type 3C-SiC/Si heterojunction, tunnelling current, strain induced effects
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
09 Engineering > 0906 Electrical and Electronic Engineering > 090699 Electrical and Electronic Engineering not elsewhere classified
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering
Identification Number or DOI: 10.1109/LED.2014.2361359
URI: http://eprints.usq.edu.au/id/eprint/38233

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