Thermoresistive properties of p-type 3C-SiC nanoscale thin films for high-temperature MEMS thermal-based sensors

Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Phan, Hoang-Phuong and Kozeki, Takahiro and Qamar, Afzaal and Namazu, Takahiro and Nguyen, Nam-Trung and Dao, Dzung Viet (2015) Thermoresistive properties of p-type 3C-SiC nanoscale thin films for high-temperature MEMS thermal-based sensors. RSC Advances, 5 (128). pp. 106083-106086.

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Abstract

We report for the first time the thermoresistive property of p-type single crystalline 3C-SiC (p-3C-SiC), which was epitaxially grown on a silicon (Si) wafer, and then transferred to a glass substrate using a Focused Ion Beam (FIB) technique. A negative and relatively large temperature coefficient of resistance (TCR) up to -5500 ppm K-1 was observed. This TCR is attributed to two activation energy thresholds of 45meV and 52 meV, corresponding to temperatures below and above 450 K, respectively, and a small reduction of hole mobility with increasing temperature. The large TCR indicates the suitability of p-3C-SiC for thermal-based sensors working in high-temperature environments.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Published version deposited in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 17 Mar 2020 02:11
Last Modified: 20 Mar 2020 04:59
Uncontrolled Keywords: sensors, stresses, stress sensors, activation energy, epitaxial growth, hole mobility, ion beams, silicon carbide, silicon wafers, substrates
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
02 Physical Sciences > 0203 Classical Physics > 020399 Classical Physics not elsewhere classified
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering
Identification Number or DOI: https://doi.org/10.1039/c5ra20289b
URI: http://eprints.usq.edu.au/id/eprint/38232

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