The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

Phan, Hoang-Phuong and Dao, Dzung Viet and Wang, Li and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Nguyen, Nam-Trung and Qamar, Afzaal and Tanner, Philip and Dimitrijev, Sima and Zhu, Yong (2015) The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films. Journal of Materials Chemistry C.


Abstract

This paper presents for the first time the effect of strain on the electrical conductance of p-type nanocrystalline SiC grown on a Si substrate. The gauge factor of the p-type nanocrystalline SiC was found to be 14.5 which is one order of magnitude larger than that in most metals. This result indicates that mechanical strain has a significant influence on the electrical conductance of p-type nanocrystalline SiC, which is promising for mechanical sensing applications in harsh environments.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Date Deposited: 24 Aug 2020 04:54
Last Modified: 24 Aug 2020 04:54
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering
Identification Number or DOI: doi10.1039/c4tc02679a
URI: http://eprints.usq.edu.au/id/eprint/38231

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