Qamar, Afzaal and Dao, Dzung Viet and Han, Jisheng and Phan, Hoang-Phuong and Younis, Adnan and Tanner, Philip and Dinh, Toan 
ORCID: https://orcid.org/0000-0002-7489-9640 and Wang, Li and Dimitrijev, Sima
(2015)
Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices.
Journal of Materials Chemistry C, 3 (48).
pp. 12394-12398.
ISSN 2050-7526
Abstract
This article reports the first results on the strain-induced pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices. The impact of crystal orientation and the direction of strain on this effect has been presented. A single crystal p-type 3C-SiC(111) was grown by low pressure chemical vapor deposition and four-terminal devices were fabricated using conventional photolithography and dry etching processes. It has been observed that the pseudo-Hall effect in p-type 3C-SiC(111) is the same in [110] and [11[2 with combining macron]] crystal orientations and is smaller than the pseudo-Hall effect of 3C-SiC(100) four-terminal devices due to the defects associated with the growth of 3C-SiC(111).
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| Item Type: | Article (Commonwealth Reporting Category C) |
|---|---|
| Refereed: | Yes |
| Item Status: | Live Archive |
| Additional Information: | ©The Royal Society of Chemistry 2015. Permanent restricted access to Published version in accordance with the copyright policy of the publisher. |
| Faculty/School / Institute/Centre: | No Faculty |
| Faculty/School / Institute/Centre: | No Faculty |
| Date Deposited: | 25 Jun 2020 04:58 |
| Last Modified: | 25 Jun 2020 04:58 |
| Uncontrolled Keywords: | Pseudo-Hall effect, terminal devices |
| Fields of Research (2008): | 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS) |
| Socio-Economic Objectives (2008): | E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering |
| Identification Number or DOI: | https://doi.org/10.1039/c5tc02984h |
| URI: | http://eprints.usq.edu.au/id/eprint/38228 |
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