Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices

Qamar, Afzaal and Dao, Dzung Viet and Han, Jisheng and Phan, Hoang-Phuong and Younis, Adnan and Tanner, Philip and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Wang, Li and Dimitrijev, Sima (2015) Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices. Journal of Materials Chemistry C, 3 (48). pp. 12394-12398. ISSN 2050-7526


Abstract

This article reports the first results on the strain-induced pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices. The impact of crystal orientation and the direction of strain on this effect has been presented. A single crystal p-type 3C-SiC(111) was grown by low pressure chemical vapor deposition and four-terminal devices were fabricated using conventional photolithography and dry etching processes. It has been observed that the pseudo-Hall effect in p-type 3C-SiC(111) is the same in [110] and [11[2 with combining macron]] crystal orientations and is smaller than the pseudo-Hall effect of 3C-SiC(100) four-terminal devices due to the defects associated with the growth of 3C-SiC(111).


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: ©The Royal Society of Chemistry 2015. Permanent restricted access to Published version in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 25 Jun 2020 04:58
Last Modified: 25 Jun 2020 04:58
Uncontrolled Keywords: Pseudo-Hall effect, terminal devices
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Fields of Research (2020): 40 ENGINEERING > 4017 Mechanical engineering > 401705 Microelectromechanical systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering
Identification Number or DOI: https://doi.org/10.1039/c5tc02984h
URI: http://eprints.usq.edu.au/id/eprint/38228

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