Orientation dependence of the pseudo-Hall effect in p-type 3C-SiC four-terminal devices under mechanical stress

Phan, Hoang-Phuong and Qamar, Afzaal and Dao, Dzung Viet and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Wang, Li and Han, Jisheng and Tanner, Philip and Dimitrijev, Sima and Nguyen, Nam-Trung (2015) Orientation dependence of the pseudo-Hall effect in p-type 3C-SiC four-terminal devices under mechanical stress. RSC Advances, 5 (69). pp. 56377-56381.

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Abstract

This paper presents for the first time the orientation dependence of the pseudo-Hall effect in p-type 3C–SiC four-terminal devices under mechanical stress. Experimental results indicate that the offset voltage of p-type 3C–SiC four-terminal devices significantly depends on the directions of the applied current and stress. We also calculated the piezoresistive coefficients π61, π62, and π66, showing that π66 with its maximum value of approximately 16.7 × 10−11 Pa−1 plays a more dominant role than π61 and π62. The magnitude of the offset voltage in arbitrary orientation under stress was estimated based on these coefficients. The finding in this study plays an important role in the optimization of Microelectromechanical Systems (MEMS) mechanical sensors utilizing the pseudo-Hall effect in p-type 3C–SiC.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Published version deposited in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 06 Jul 2020 06:33
Last Modified: 06 Jul 2020 06:33
Uncontrolled Keywords: stress; electromechanical devices; Hall effect; MEMS; silicon carbide
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Fields of Research (2020): 40 ENGINEERING > 4017 Mechanical engineering > 401705 Microelectromechanical systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970102 Expanding Knowledge in the Physical Sciences
Identification Number or DOI: https://doi.org/10.1039/c5ra10144a
URI: http://eprints.usq.edu.au/id/eprint/38226

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