Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature

Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Dao, Dzung Viet and Phan, Hoang-Phuong and Wang, Li and Qamar, Afzaal and Nguyen, Nam-Trung and Tanner, Philip and Rybachuk, Maksym (2015) Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature. Applied Physics Express, 8 (6):061303. ISSN 1882-0778


Abstract

We report on the temperature dependence of the charge transport and activation energy of amorphous silicon carbide (a-SiC) thin films grown on quartz by low-pressure chemical vapor deposition. The electrical conductivity as characterized by the Arrhenius rule was found to vary distinctly under two activation energy thresholds of 150 and 205 meV, corresponding to temperature ranges of 300 to 450 K and 450 to 580 K, respectively. The a-SiC/quartz system displayed a high temperature coefficient of resistance ranging from −4,000 to −16,000 ppm/K, demonstrating a strong feasibility of using this material for highly sensitive thermal sensing applications.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Date Deposited: 12 Aug 2020 23:56
Last Modified: 12 Aug 2020 23:56
Uncontrolled Keywords: Stress sensing element; thermistors; absorption; substrate
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970102 Expanding Knowledge in the Physical Sciences
Identification Number or DOI: https://doi.org/10.7567/APEX.8.061303
URI: http://eprints.usq.edu.au/id/eprint/38221

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