Piezo-Hall effect in single crystal p-type 3C-SiC(100) thin film grown by low pressure chemical vapor deposition

Qamar, Afzaal and Phan, H.-P. and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Wang, Li and Dimitrijev, Sima and Dao, Dzung Viet (2016) Piezo-Hall effect in single crystal p-type 3C-SiC(100) thin film grown by low pressure chemical vapor deposition. RSC Advances, 6 (37). pp. 31191-31195.

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Abstract

This article reports the first results on piezo-Hall effect in single crystal p-type 3C–SiC(100) Hall devices. Single crystal p-type 3C–SiC(100) was grown by low pressure chemical vapor deposition, and Hall devices were fabricated using the conventional photolithography and dry etching processes. An experimental setup capable of applying stress during Hall-effect measurements was designed to measure the piezo-Hall effect. The piezo-Hall effect is quantified by directly observing the variation in magnetic field sensitivity of the Hall devices upon an applied stress. The piezo-Hall coefficient P12 characterized by these measurements is found to be 6.4 × 10−11 Pa−1.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Published version deposited in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 06 Jul 2020 06:20
Last Modified: 11 Sep 2020 00:56
Uncontrolled Keywords: vapor deposition; dry etching; Hall effect; Hall effect devices
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Fields of Research (2020): 40 ENGINEERING > 4017 Mechanical engineering > 401705 Microelectromechanical systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970102 Expanding Knowledge in the Physical Sciences
Identification Number or DOI: https://doi.org/10.1039/c6ra04501d
URI: http://eprints.usq.edu.au/id/eprint/38217

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