Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation

Qamar, Afzaal and Dao, Dzung Viet and Phan, Hoang-Phuong and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Dimitrijev, Sima (2016) Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation. Applied Physics Letters, 109 (9):092903. ISSN 0003-6951


Abstract

Piezo-Hall effect in a single crystal p-type 3C-SiC, grown by LPCVD process, has been characterized for various crystallographic orientations. The quantified values of the piezo-Hall effect in heavily doped p-type 3C-SiC(100) and 3C-SiC(111) for different crystallographic orientations were used to obtain the fundamental piezo-Hall coefficients, P12=(5.3±0.4)×10−11 Pa−1,P11=(−2.6±0.6)×10−11 Pa−1, and P44=(11.42±0.6)×10−11 Pa−1. Unlike the piezoresistive effect, the piezo-Hall effect for (100) and (111) planes is found to be independent of the angle of rotation of the device within the crystal plane. The values of fundamental piezo-Hall coefficients obtained in this study can be used to predict the piezo-Hall coefficients in any crystal orientation which is very important for designing of 3C-SiC Hall sensors to minimize the piezo-Hall effect for stable magnetic field sensitivity.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Files associated with this item cannot be displayed due to copyright restrictions.
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Date Deposited: 07 Aug 2020 03:29
Last Modified: 11 Sep 2020 00:52
Uncontrolled Keywords: Wearable electronics; strain sensors; pencil-drawn; hybrid structure; paper; transparent; graphite; devices; nanocomposite; silicon
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Fields of Research (2020): 40 ENGINEERING > 4017 Mechanical engineering > 401705 Microelectromechanical systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970102 Expanding Knowledge in the Physical Sciences
Identification Number or DOI: https://doi.org/10.1063/1.4962048
URI: http://eprints.usq.edu.au/id/eprint/38213

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