Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

Phan, Hoang-Phuong and Nguyen, Tuan-Khoa and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Ina, Ginnosuke and Kermany, Atieh Ranjbar and Qamar, Afzaal and Han, Jisheng and Namazu, Takahiro and Maeda, Ryutaro and Dao, Dzung Viet and Nguyen, Nam-Trung (2017) Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification. Applied Physics Letters, 110 (14):141906. ISSN 0003-6951


Abstract

Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date, the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nanostrain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C-SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes and the development of ultra sensitive mechanical sensors.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Files associated with this item cannot be displayed due to copyright restrictions
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Date Deposited: 22 Jul 2020 23:49
Last Modified: 11 Sep 2020 01:27
Uncontrolled Keywords: Layer black phosphorus; performance; graphene; resonators; dependence; systems
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Fields of Research (2020): 40 ENGINEERING > 4017 Mechanical engineering > 401705 Microelectromechanical systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970102 Expanding Knowledge in the Physical Sciences
Identification Number or DOI: https://doi.org/10.1063/1.4979834
URI: http://eprints.usq.edu.au/id/eprint/38208

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