Pseudo-Hall Effect in Single Crystal n-Type 3C-SiC(100) Thin Film

Qamar, Afzaal and Dao, Dzung Viet and Han, Jisheng and Iacopi, Alan and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Phan, Hoang-Phuong and Dimitrijev, Sima (2017) Pseudo-Hall Effect in Single Crystal n-Type 3C-SiC(100) Thin Film. Key Engineering Materials, 733. pp. 3-7. ISSN 1662-9795


Abstract

This article reports the first results on stress induced pseudo-Hall effect in single crystal n-type 3C-SiC(100) grown by LPCVD process. After the growth process, Hall devices were fabricated by standard photolithography and dry etching processes. The bending beam method was employed to study the stress induced changes in the electrical response of the fabricated Hall devices. It has been observed that when stress is applied to the 3C-SiC(100) Hall devices, the offset voltage of the Hall devices varies linearly with the applied compressive and tensile stresses which is called, the pseudo-Hall effect. The variation of the offset voltage of these Hall devices is also proportional to the applied input current. This variation of the offset voltage with the applied compressive and tensile stresses shows that single crystal n-type 3C-SiC(100) can be used for stress sensing applications.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Date Deposited: 02 Sep 2020 05:46
Last Modified: 30 Sep 2020 05:55
Uncontrolled Keywords: Pseudo-Hall effect, single crystal n-type 3C-SiC, thin film, strain effect
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970102 Expanding Knowledge in the Physical Sciences
Identification Number or DOI: https://doi.org/10.4028/www.scientific.net/KEM.733.3
URI: http://eprints.usq.edu.au/id/eprint/38198

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