Formation of silicon carbide nanowire on insulator through direct wet oxidation

Phan, Hoang-Phuong and Ina, Ginnosuke and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Kozeki, Takahiro and Nguyen, Tuan-Khoa and Namazu, Takahiro and Qamar, Afzaal and Dao, Dzung Viet and Nguyen, Nam-Trung (2017) Formation of silicon carbide nanowire on insulator through direct wet oxidation. Materials Letters, 196. pp. 280-283. ISSN 0167-577X


Abstract

Silicon carbide on insulator is a promising platform for electronic devices at high temperature as well as for opto-electrical applications. Utilizing the chemical inertness of SiC, this work presents a novel technique to form cubic-silicon carbide (3C-SiC) on silicon dioxide (SiO2) by using silicon wet-thermal-oxidation. Experimental data confirmed that SiO2 was successfully formed underneath of 300 nm width SiC nanowires, while the properties of SiC was almost unaffected during the oxidation process. This simple technique will open the pathway to the development of SiCOI (SiC on insulator) based electrical and optical applications.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Date Deposited: 06 Aug 2020 04:17
Last Modified: 17 Jun 2021 00:07
Uncontrolled Keywords: Silicon carbide; SiC on insulator; SiC nanowires; Nanowires waveguides; LOCOS; MEMS
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering
Identification Number or DOI: https://doi.org/10.1016/j.matlet.2017.03.118
URI: http://eprints.usq.edu.au/id/eprint/38195

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