Experimental investigation of piezoresistive effect in p-Type 4H-SiC

Nguyen, Tuan-Khoa and Phan, Hoang-Phuong and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Han, Jisheng and Dimitrijev, Sima and Tanner, Philip and Foisal, Abu Riduan Md and Zhu, Yong and Nguyen, Nam-Trung and Dao, Dzung Viet (2017) Experimental investigation of piezoresistive effect in p-Type 4H-SiC. IEEE Electron Device Letters, 38 (7):7917233. pp. 955-958. ISSN 0741-3106


Abstract

This letter presents for the first time the piezoresistive effect in p-type 4H-SiC. Longitudinal and transverse p-type 4H-SiC piezoresistors with a doping concentration of 10 18 cm -3 were fabricated along [1100] directions. Ni/Al electrodes annealed at 1000°C showed a good ohmic contact, and then, the longitudinal and transverse gauge factors were found to be as high as 31.5 and -27.3, respectively. The large gauge factors, attributed to the change of valance energy bands upon application of mechanical strain, and the linear relationship between the resistance change versus induced strain demonstrate the potential of p-type 4H-SiC for mechanical sensing applications.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Files associated with this item cannot be displayed due to copyright restrictions.
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Date Deposited: 06 Aug 2020 04:08
Last Modified: 11 Sep 2020 01:00
Uncontrolled Keywords: 4H-SiC; MEMS mechanical sensor; piezoresistive effect; silicon carbide
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering
Identification Number or DOI: https://doi.org/10.1109/LED.2017.2700402
URI: http://eprints.usq.edu.au/id/eprint/38193

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