Utilizing large hall offset voltage for conversion free 4H SiC strain sensor

Nguyen, Tuan-Khoa and Phan, Hoang-Phuong and Han, Jisheng and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Foisal, Abu Riduan Md and Zhu, Yong and Nguyen, Nam-Trung and Dao, Dzung Viet (2018) Utilizing large hall offset voltage for conversion free 4H SiC strain sensor. In: 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2018), 21-25 Jan, 2018, Belfast, United Kingdom.


Abstract

This work presents a conversion free p-type 4H silicon carbide (4H-SiC) four-terminal strain sensor utilizing a large Hall offset voltage in a symmetric four-terminal configuration. Upon the application of mechanical strain, a high sensitivity of 209 mV/A/ppm was obtained. The strain sensor also exhibited good repeatability and linearity with a significantly large offset voltage in the induced strain ranging from 0 to 334ppm. Coupled these performances with the excellent mechanical strength, electrical conductivity, thermal stability, and chemical inertness of the SiC material, the proposed 4H-SiC strain sensor is promising for stress/strain monitoring for harsh operating environments with high signal-to-noise ratio.


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Item Type: Conference or Workshop Item (Commonwealth Reporting Category E) (Paper)
Refereed: Yes
Item Status: Live Archive
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Date Deposited: 02 Sep 2020 06:51
Last Modified: 30 Sep 2020 22:46
Uncontrolled Keywords: Capacitive sensors, Strain, Silicon carbide, Sensitivity, Temperature sensors, Monitoring
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering
Identification Number or DOI: https://doi.org/10.1109/MEMSYS.2018.8346697
URI: http://eprints.usq.edu.au/id/eprint/38190

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