Strain effect in highly-doped n-Type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement

Phan, Hoang-Phuong and Nguyen, Tuan-Khoa and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Cheng, Han‐Hao and Mu, Fengwen and Iacopi, Alan and Hold, Leonie and Dao, Viet Dzung and Suga, Tadatomo and Senesky, Debbie G. and Nguyen, Nam‐Trung (2018) Strain effect in highly-doped n-Type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement. Physica Status Solidi (A) Applications and Materials Science, 215 (24):1800288. ISSN 1862-6300


Abstract

This work reports the strain effect on the electrical properties of highly doped n‐type single crystalline cubic silicon carbide (3C‐SiC) transferred onto a 6‐inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of −8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highly doped 3C‐SiC film also exhibits an excellent linearity and consistent reproducibility after several bending cycles. The experimental result is in good agreement with the theoretical analysis based on the phenomenon of electron transfer between many valleys in the conduction band of n‐type 3C‐SiC. Our finding for the large gauge factor in n‐type 3C‐SiC coupled with the elimination of the current leak to the insulated substrate could pave the way for the development of single crystal SiC‐on‐glass based MEMS applications.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Files associated with this item cannot be displayed due to copyright restrictions.
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Date Deposited: 06 Aug 2020 02:29
Last Modified: 11 Sep 2020 02:41
Uncontrolled Keywords: MEMS; piezoresistance; silicon carbide; strain engineering; wafer bonding
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering
Identification Number or DOI: https://doi.org/10.1002/pssa.201800288
URI: http://eprints.usq.edu.au/id/eprint/38187

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