Photoresponse of a highly-rectifying 3C-SiC/Si heterostructure under UV and visible illuminations

Foisal, Abu Riduan Md and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Tanner, Philip and Phan, Hoang-Phuong and Nguyen, Tuan-Khoa and Streed, Erik W. and Dao, Dzung Viet (2018) Photoresponse of a highly-rectifying 3C-SiC/Si heterostructure under UV and visible illuminations. IEEE Electron Device Letters, 39 (8). pp. 1219-1222. ISSN 0741-3106


Abstract

In this letter, we report the photo-characteristics of an n-3C-Silicon carbide (SiC)/p-Si heterojunction under ultraviolet (UV) and visible illuminations. The 3C-SiC thin film has been grown on Si (100) substrate by a low pressure chemical vapor deposition technique at 1000 °C. The as-grown structure shows an excellent rectification ratio (IF/IR) of 1.8 × 10 6 at ±2 V and a reverse bias current of 5.5 × 10 -9 A at 2V in dark conditions. The heterojunction exhibits good sensitivity simultaneously to both UV (375 nm) and visible (637 nm) illuminations. The results indicate that the fabricated structure could be an excellent platform where detection of a wide spectral illumination is vital. The insight of electron-hole pairs generation and carrier transport mechanism at different illumination conditions is explained in detail via an anisotype heterojunction energy band diagram.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Files associated with this item cannot be displayed due to copyright restrictions.
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Date Deposited: 30 Jul 2020 02:34
Last Modified: 11 Sep 2020 02:41
Uncontrolled Keywords: 3C-SiC/Si heterojunction; rectification ratio; UV-visible illumination; responsivity; energy band diagram
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering
Identification Number or DOI: https://doi.org/10.1109/LED.2018.2850757
URI: http://eprints.usq.edu.au/id/eprint/38185

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