High-temperature tolerance of the piezoresistive effect in p-4H-SiC for harsh environment sensing

Nguyen, Tuan-Khoa and Phan, Hoang-Phuong and Dinh, Toan ORCID: https://orcid.org/0000-0002-7489-9640 and Foisal, Abu Riduan Md and Nguyen, Nam-Trung and Dao, Dzung (2018) High-temperature tolerance of the piezoresistive effect in p-4H-SiC for harsh environment sensing. Journal of Materials Chemistry C, 6 (32). pp. 8613-8617. ISSN 2050-7526


Abstract

4H-silicon carbide based sensors are promising candidates for replacing prevalent silicon-based counterparts in harsh environments owing to their superior chemical inertness, high stability and reliability. However, the wafer cost and the difficulty in obtaining an ohmic contact in the metallization process hinders the use of this SiC polytype for practical sensing applications. This article presents the high-temperature tolerance of a p-type 4H-SiC piezoresistor at elevated temperatures up to 600 °C. A good ohmic contact was formed by the metallisation process using titanium and aluminium annealed at 1000 °C. The leakage current at high temperatures was measured to be negligible thanks to a robust p–n junction. Owing to the superior physical properties of the bulk 4H-SiC material, a high gauge factor of 23 was obtained at 600 °C. The piezoresistive effect also exhibits good linearity and high stability at high temperatures. The results demonstrate the capability of p-type 4H-SiC for the development of highly sensitive sensors for hostile environments.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Files associated with this item cannot be displayed due to copyright restrictions.
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering (1 Jul 2013 -)
Date Deposited: 30 Jul 2020 00:39
Last Modified: 11 Sep 2020 02:36
Uncontrolled Keywords: P-type; silicon-carbide; ohmic contact; sensors; design
Fields of Research (2008): 09 Engineering > 0913 Mechanical Engineering > 091306 Microelectromechanical Systems (MEMS)
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering
Identification Number or DOI: https://doi.org/10.1039/c8tc03094d
URI: http://eprints.usq.edu.au/id/eprint/38176

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