Anisotropy control–induced unique anisotropic thermoelectric performance in the n-type Bi2Te2.7Se0.3 thin films

Tan, Ming and Liu, Wei-Di and Shi, Xiao-Lei ORCID: https://orcid.org/0000-0003-0905-2547 and Gao, Han and Li, Hui and Li, Cong and Liu, Xiao-Biao and Deng, Yuan and Chen, Zhi-Gang (2019) Anisotropy control–induced unique anisotropic thermoelectric performance in the n-type Bi2Te2.7Se0.3 thin films. Small Methods, 3 (11 - Article 1900582).


Abstract

Anisotropic Bi2Te3‐based thermoelectric materials have drawn extensive interest in the past decades. Here, n‐type Bi2Te2.7Se0.3 films with superhigh figure of merit are developed through anisotropy control via tuning an external electric field and deposition anisotropy. It is found that the angle of interplanar grain boundaries between (0 1 5) and (0 1 11) planes can be tuned by the applied external electric field, which leads to the strengthened anisotropy of electron mobility and simultaneously maintains low lattice thermal conductivity. Dominated by the unique change in the anisotropy of both lattice thermal conductivity and electron mobility, a record‐high zT value of ≈1.6 at room temperature can be achieved in the as‐deposited n‐type Bi2Te2.7Se0.3 film under 20 V external electric field. This work indicates that the electric field–induced deposition anisotropy control can be used to develop high‐performance Bi2Te3‐based thermoelectric films.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Permanent restricted access to Published version in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: Current - Institute for Advanced Engineering and Space Sciences - Centre for Future Materials (1 Jan 2017 -)
Faculty/School / Institute/Centre: Current - Institute for Advanced Engineering and Space Sciences - Centre for Future Materials (1 Jan 2017 -)
Date Deposited: 06 Mar 2020 05:01
Last Modified: 13 Mar 2020 06:40
Uncontrolled Keywords: anisotropy, films, grain boundaries, n-type Bi2Te2.7Se0.3, thermoelectricity
Fields of Research : 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials
Identification Number or DOI: 10.1002/smtd.201900582
URI: http://eprints.usq.edu.au/id/eprint/37940

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