Temperature-independent ferroelectric property and characterization of high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films

Zhang, Linxing and Chen, Jun and Zhao, Hanqing and Fan, Longlong and Rong, Yangchun and Deng, Jinxia and Yu, Ranbo and Xing, Xianran (2013) Temperature-independent ferroelectric property and characterization of high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films. Applied Physics Letters, 103 (8). 082902-1. ISSN 0003-6951

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Ferroelectric property stability against elevated temperature is significant for ferroelectric film applications, such as non-volatile ferroelectric random access memories. The high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films show the temperature-independent ferroelectric properties, which were fabricated on Pt(111)/Ti/SiO2/Si substrates via sol-gel method. The present thin films were well crystallized in a phase-pure perovskite structure with a high (100) orientation and uniform texture. A remanent polarization (2Pr) of 77 μC cm-2 and a local effective piezoelectric coefficient d33* of 60 pm/V were observed in the 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films. It is interesting to observe a behavior of temperature-independent ferroelectric property in the temperature range of room temperature to 125°C. The remanent polarization, coercive field, and polarization at the maximum field are almost constant in the investigated temperature range. Furthermore, the dielectric loss and fatigue properties of 0.2Bi(Mg 1/2Ti1/2)O3-0.8PbTiO3 thin films have been effectively improved by the Mn-doping.

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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Access to published version in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 10 Oct 2017 01:27
Last Modified: 10 Oct 2017 01:27
Uncontrolled Keywords: elevated temperature; fatigue properties; ferroelectric property; non-volatile ferroelectric random access memory; perovskite structures; piezoelectric coefficient; room temperature; temperature range; dielectric materials; semiconductor devices and integrated circuits; coating techniques
Fields of Research (2008): 02 Physical Sciences > 0203 Classical Physics > 020302 Electrostatics and Electrodynamics
09 Engineering > 0906 Electrical and Electronic Engineering > 090699 Electrical and Electronic Engineering not elsewhere classified
Fields of Research (2020): 51 PHYSICAL SCIENCES > 5103 Classical physics > 510303 Electrostatics and electrodynamics
40 ENGINEERING > 4008 Electrical engineering > 400899 Electrical engineering not elsewhere classified
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970102 Expanding Knowledge in the Physical Sciences
Identification Number or DOI: https://doi.org/10.1063/1.4819205
URI: http://eprints.usq.edu.au/id/eprint/31970

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