Hot-filament-assisted growth of straight SiOx nanowires for optoelectronic application

Nie, Tian-Xiao and Chen, Zhi-Gang and Niu, Mu-Tong and Wu, Jonathon and Zhang, Jin-Ping and Wu, Yue-Qin and Fan, Yong-Liang and Yang, Xin-Ju and Jiang, Zui-Min and Zou, Jin (2013) Hot-filament-assisted growth of straight SiOx nanowires for optoelectronic application. The Journal of Physical Chemistry C, 117 (27). pp. 14354-14361. ISSN 1932-7447

Abstract

Uniform and straight amorphous SiOx nanowires with a length of several micrometers and an average diameter of 100 nm were synthesized by directly heating GeSi alloy film substrate with high melting-point tungsten. Systematically comparative experiments suggest that both the tungsten and GeSi alloy film play an important role in the formation of straight amorphous SiOx nanowire. Through detailed morphological, structural and chemical characterizations using electron microscopy, the contact angle anisotropy mechanism is suggested for the growth of the straight SiOx nanowires.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Published version cannot be displayed due to copyright restrictions.
Faculty / Department / School: No Faculty
Date Deposited: 14 Jun 2017 00:14
Last Modified: 27 Jun 2017 02:32
Uncontrolled Keywords: average diameter; chemical characterization; comparative experiments; GeSi alloy film; optoelectronic applications; metallurgy and metallography; metals corrosion and protection; metal plating; tungsten and alloys; nanotechnology; solid state physics
Fields of Research : 03 Chemical Sciences > 0303 Macromolecular and Materials Chemistry > 030302 Nanochemistry and Supramolecular Chemistry
Socio-Economic Objective: E Expanding Knowledge > 97 Expanding Knowledge > 970103 Expanding Knowledge in the Chemical Sciences
Identification Number or DOI: 10.1021/jp403588p
URI: http://eprints.usq.edu.au/id/eprint/31739

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