Amorphous SiOx nanowires catalyzed by metallic Ge for optoelectronic applications

Nie, Tian-Xiao and Chen, Zhi-Gang ORCID: and Wu, Yue-Qin and Lin, Jian-Hui and Zhang, Jiu-Zhan and Fan, Yong-Liang and Yang, Xin-Ju and Jiang, Zui-Min and Zou, Jin (2011) Amorphous SiOx nanowires catalyzed by metallic Ge for optoelectronic applications. Journal of Alloys and Compounds, 509 (9). pp. 3978-3984. ISSN 0925-8388


Amorphous SiOx nanowires, with diameters of ∼20 nm and lengths of tens of μm, were grown from self-organized GeSi quantum dots or GeSi alloy epilayers on Si substrates. The morphologies and yield of these amorphous nanowires depend strongly upon the synthesis temperature. Comparative experiments indicate that the present SiOx nanowires are induced by metallic Ge as catalysts via the solid liquid solid growth mechanism. Two broad peaks centered at 410 nm and 570 nm were observed in photoluminescence spectrum, indicating that such SiOx nanowires have the potential applications in white light-emitting diodes, full-colour display, full-colour indicator and light sources.

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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Published version cannot be displayed due to copyright restrictions.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 14 Jun 2017 05:23
Last Modified: 14 Jun 2017 05:23
Uncontrolled Keywords: electron microscopy; growth mechanism; metallic Ge catalysts; SiOx nanowires; visible emission; amorphous nanowires; comparative experiments; Ge-Si alloys; growth mechanism; metallic Ge catalysts; optoelectronic applications; photoluminescence spectrum; potential applications; quantum dot; self-organized; Si substrates; SiOx nanowires; solid-liquid-solid growths; synthesis temperatures; visible emissions; white light emitting diodes; solid state physics; chemical products generally; chemical agents and basic industrial chemicals; nanotechnology; light and optics; compound semiconducting materials; others, incl. Bismuth, Boron, Cadmium, Cobalt, Mercury, Niobium, Selenium, Silicon, Tellurium
Fields of Research (2008): 02 Physical Sciences > 0204 Condensed Matter Physics > 020404 Electronic and Magnetic Properties of Condensed Matter; Superconductivity
09 Engineering > 0912 Materials Engineering > 091203 Compound Semiconductors
Fields of Research (2020): 51 PHYSICAL SCIENCES > 5104 Condensed matter physics > 510404 Electronic and magnetic properties of condensed matter; superconductivity
40 ENGINEERING > 4016 Materials engineering > 401603 Compound semiconductors
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970110 Expanding Knowledge in Technology
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