Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer

Nie, Tian-Xiao and Lin, Jin-Hui and Chen, Zhi-Gang and Shao, Yuan-Min and Wu, Yue-Qin and Yang, Xin-Ju and Fan, Yong-Liang and Jiang, Zui-Min and Zou, Jin (2011) Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer. Journal of Applied Physics, 110 (11). ISSN 0021-8979

Abstract

A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 C. After annealing the sample in an oxygen atmosphere at 1000 C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Published version cannot be displayed due to copyright restrictions.
Faculty / Department / School: No Faculty
Date Deposited: 28 Jun 2017 05:36
Last Modified: 28 Jun 2017 05:36
Uncontrolled Keywords: as-grown; Ge diffusion; Ge dots; Ge quantum dot; Ge-segregation; growth mechanisms; oxygen atmosphere; Si capping layer; Stranski-Krastanov mode; thermally oxidized; two layers; single element semiconducting materials; semiconductor devices and integrated circuits; chemical products generally
Fields of Research : 03 Chemical Sciences > 0303 Macromolecular and Materials Chemistry > 030302 Nanochemistry and Supramolecular Chemistry
Socio-Economic Objective: E Expanding Knowledge > 97 Expanding Knowledge > 970103 Expanding Knowledge in the Chemical Sciences
Identification Number or DOI: 10.1063/1.3665398
URI: http://eprints.usq.edu.au/id/eprint/31729

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