Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process

Kim, Jung Hyuk and Moon, So Ra and Kim, Yong and Chen, Zhi Gang ORCID: https://orcid.org/0000-0002-9309-7993 and Zou, Jin and Choi, Duk Yong and Joyce, Hannah J. and Gao, Qiang and Tan, H. Hoe and Jagadish, Chennupati (2012) Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process. Nanotechnology, 23 (11). ISSN 0957-4484


Abstract

We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Published version cannot be displayed due to copyright restrictions.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 28 Jun 2017 04:27
Last Modified: 28 Jun 2017 04:27
Uncontrolled Keywords: epitaxially grown; germanium nanowires; nano-bridges; reactant gas; side walls; silicon substrates; two-temperature; nanotechnology; chemical products generally; coatings and finishes; coating techniques; solid state physics;
Fields of Research (2008): 03 Chemical Sciences > 0303 Macromolecular and Materials Chemistry > 030302 Nanochemistry and Supramolecular Chemistry
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970103 Expanding Knowledge in the Chemical Sciences
Identification Number or DOI: https://doi.org/10.1088/0957-4484/23/11/115603
URI: http://eprints.usq.edu.au/id/eprint/31723

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