Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process

Kim, Jung Hyuk and Moon, So Ra and Kim, Yong and Chen, Zhi Gang and Zou, Jin and Choi, Duk Yong and Joyce, Hannah J. and Gao, Qiang and Tan, H. Hoe and Jagadish, Chennupati (2012) Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process. Nanotechnology, 23 (11). ISSN 0957-4484

Abstract

We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Published version cannot be displayed due to copyright restrictions.
Faculty / Department / School: No Faculty
Date Deposited: 28 Jun 2017 04:27
Last Modified: 28 Jun 2017 04:27
Uncontrolled Keywords: epitaxially grown; germanium nanowires; nano-bridges; reactant gas; side walls; silicon substrates; two-temperature; nanotechnology; chemical products generally; coatings and finishes; coating techniques; solid state physics;
Fields of Research : 03 Chemical Sciences > 0303 Macromolecular and Materials Chemistry > 030302 Nanochemistry and Supramolecular Chemistry
Socio-Economic Objective: E Expanding Knowledge > 97 Expanding Knowledge > 970103 Expanding Knowledge in the Chemical Sciences
Identification Number or DOI: 10.1088/0957-4484/23/11/115603
URI: http://eprints.usq.edu.au/id/eprint/31723

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