Weak anti-localization and quantum oscillations of surface states in topological insulator Bi 2Se 2Te

Bao, Lihong and He, Liang and Meyer, Nicholas and Kou, Xufeng and Zhang, Peng and Chen, Zhi-Gang and Fedorov, Alexei V. and Zou, Jin and Riedemann, Trevor M. and Lograsso, Thomas A. and Tuttle, Gary and Wang, Kang L. and Xiu, Faxian (2012) Weak anti-localization and quantum oscillations of surface states in topological insulator Bi 2Se 2Te. Scientific Reports, 2.

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Abstract

Topological insulators, a new quantum state of matter, create exciting opportunities for studying topological quantum physics and for exploring spintronic applications due to their gapless helical metallic surface states. Here, we report the observation of weak anti-localization and quantum oscillations originated from surface states in Bi 2Se 2Te crystals. Angle-resolved photoemission spectroscopy measurements on cleaved Bi 2Se 2Te crystals show a well-defined linear dispersion without intersection of the conduction band. The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model and the extracted phase coherent length shows a power-law dependence with temperature (∼T-0.44), indicating the presence of the surface states. More importantly, the analysis of a Landau-level fan diagram of Shubnikov-de Hass oscillations yields a finite Berry phase of ∼0.42π, suggesting the Dirac nature of the surface states. Our results demonstrate that Bi 2Se 2Te can serve as a suitable topological insulator candidate for achieving intrinsic quantum transport of surface Dirac fermions.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Published online 31 October 2018. Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
Faculty / Department / School: No Faculty
Date Deposited: 19 Jun 2017 05:02
Last Modified: 05 Nov 2018 02:24
Uncontrolled Keywords: GaAs growth behaviour; Au nanoparticles; GaAs {111}B substrate; electron microscopy
Fields of Research : 02 Physical Sciences > 0299 Other Physical Sciences > 029999 Physical Sciences not elsewhere classified
03 Chemical Sciences > 0399 Other Chemical Sciences > 039999 Chemical Sciences not elsewhere classified
Socio-Economic Objective: E Expanding Knowledge > 97 Expanding Knowledge > 970103 Expanding Knowledge in the Chemical Sciences
E Expanding Knowledge > 97 Expanding Knowledge > 970102 Expanding Knowledge in the Physical Sciences
Identification Number or DOI: 10.1038/srep00726
URI: http://eprints.usq.edu.au/id/eprint/31719

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