High-quality Bi2Te3 thin films grown on mica substrates for potential optoelectronic applications

Wang, K. and Liu, Yanwen and Wang, Weiyi and Meyer, N. and Bao, L. H. and He, L. and Lang, M. R. and Chen, Z. G. and Che, X. Y. and Post, K. and Zou, J. and Basov, D. N. and Wang, K. L. and Xiu, Faxian (2013) High-quality Bi2Te3 thin films grown on mica substrates for potential optoelectronic applications. Applied Physics Letters, 103 (3). ISSN 00036951

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Abstract

We report high-quality topological insulator Bi2Te3 thin films grown on muscovite mica substrates by molecular beam epitaxy. The topographic and structural analysis revealed that the Bi2Te 3 thin films exhibited atomically smooth terraces over a large area and a high crystalline quality. Both weak antilocalization effect and quantum oscillations were observed in the magnetotransport of the relatively thin samples. A phase coherence length of 277 nm for a 6 nm thin film and a high surface mobility of 0.58 m2 V-1 s-1 for a 4 nm thin film were achieved. These results confirm that the thin films grown on mica are of high quality.


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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Access to published version in accordance with the copyright policy of the publisher.
Faculty / Department / School: No Faculty
Date Deposited: 23 Jun 2017 01:15
Last Modified: 23 Jun 2017 01:15
Uncontrolled Keywords: high-crystalline quality; mica substrates; optoelectronic applications; phase-coherence length; quantum oscillations; surface mobility; topological insulators; weak antilocalization; minerals; semiconductor devices and integrated circuits
Fields of Research : 03 Chemical Sciences > 0303 Macromolecular and Materials Chemistry > 030399 Macromolecular and Materials Chemistry not elsewhere classified
Socio-Economic Objective: E Expanding Knowledge > 97 Expanding Knowledge > 970103 Expanding Knowledge in the Chemical Sciences
Identification Number or DOI: 10.1063/1.4813903
URI: http://eprints.usq.edu.au/id/eprint/31710

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