Observations of a metal-insulator transition and strong surface states in Bi2-x Sbx Se3 thin films

Zhang, Cheng and Yuan, Xiang and Wang, Kai and Chen, Zhi-Gang ORCID: https://orcid.org/0000-0002-9309-7993 and Cao, Baobao and Wang, Weiyi and Liu, Yanwen and Zou, Jin and Xiu, Faxian (2014) Observations of a metal-insulator transition and strong surface states in Bi2-x Sbx Se3 thin films. Advanced Materials, 26 (41). pp. 7110-7115. ISSN 0935-9648


A systematic study of Raman and electric transport measurements on Bi2-xSbxSe3 thin films Bi2-xSbx Se3 thin films were grown on freshly cleaved mica. The Bi/Sb ratio was determined by controlling the temperatures of the Bi and Sb cells. In order to reduce the Se vacancies, the thin film growth was maintained under Se-rich conditions with the substrate temperature set at 200 °C. The thickness of the films was fixed at 8 QL by controlling the growth time. The topography of grown films was examined by AFM in tapping mode, and the film thickness was determined by scanning a scratch deliberately made on as-grown thin films. The doping concentrations were determined by energy dispersive spectroscopy through TEM and X-ray photoelectron spectroscopy. Raman data were obtained at room temperature with a spectrometer with a 514.5 nm laser. Subsequently, thin films were etched into 1 mm wide Hall bars by Ar plasma etching. The results demonstrate a feasible approach to suppressing the bulk influence and manipulating the band structure while maintaining the topological non-trivial surface in the Bi2-xSbxSe 3 system.

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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Published version cannot be displayed due to copyright restrictions.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 20 Jun 2017 06:29
Last Modified: 20 Jun 2017 06:29
Uncontrolled Keywords: as-grown thin films; doping concentration; electric transport measurements; freshly cleaved mica; room temperature; substrate temperature; systematic study; thickness of the film; minerals; semiconducting materials; compound semiconducting materials; semiconductor devices and integrated circuits; chemistry; physical properties of gases, liquids and solids; materials science
Fields of Research (2008): 03 Chemical Sciences > 0399 Other Chemical Sciences > 039999 Chemical Sciences not elsewhere classified
Fields of Research (2020): 34 CHEMICAL SCIENCES > 3499 Other chemical sciences > 349999 Other chemical sciences not elsewhere classified
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970103 Expanding Knowledge in the Chemical Sciences
Identification Number or DOI: https://doi.org/10.1002/adma.201402299
URI: http://eprints.usq.edu.au/id/eprint/31705

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