Arrayed van der waals vertical heterostructures based on 2D GaSe grown by molecular beam epitaxy

Yuan, Xiang and Tang, Lei and Liu, Shanshan and Wang, Peng and Chen, Zhigang and Zhang, Cheng and Liu, Yanwen and Wang, Weiyi and Zou, Yichao and Liu, Cong and Guo, Nan and Zou, Jin and Zhou, Peng and Hu, Weida and Xiu, Faxian (2015) Arrayed van der waals vertical heterostructures based on 2D GaSe grown by molecular beam epitaxy. Nano Letters, 15 (5). pp. 3571-3577. ISSN 1530-6984

Abstract

Vertically stacking two-dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures on a wafer scale with an atomically sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly efficient photodetector arrays were fabricated, based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust, with a response time of 60 μs. Importantly, the device shows no sign of degradation after 1 million cycles of operation. We also carried out numerical simulations to understand the underlying device working principles. Our study establishes a new approach to produce controllable, robust, and large-area 2D heterostructures and presents a crucial step for further practical applications.


Statistics for USQ ePrint 31683
Statistics for this ePrint Item
Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Published version cannot be displayed due to copyright restrictions.
Faculty / Department / School: No Faculty
Date Deposited: 09 Jun 2017 03:30
Last Modified: 27 Jun 2017 02:27
Uncontrolled Keywords: 2D materials; GaSe; molecular beam epitaxy; p-n junctions; photodiodes; van der Waals heterostructure; atomically sharp interface; external quantum efficiency; GaSe; P-n junction; photo detector array; rectifying characteristics; two Dimensional (2 D); Van der waals; single element semiconducting materials; semiconductor devices and integrated circuits; optical communication equipment; optical devices and systems; coatings and finishes; atomic and molecular physics; fluidex
Fields of Research : 03 Chemical Sciences > 0303 Macromolecular and Materials Chemistry > 030304 Physical Chemistry of Materials
Socio-Economic Objective: E Expanding Knowledge > 97 Expanding Knowledge > 970103 Expanding Knowledge in the Chemical Sciences
Identification Number or DOI: 10.1021/acs.nanolett.5b01058
URI: http://eprints.usq.edu.au/id/eprint/31683

Actions (login required)

View Item Archive Repository Staff Only