Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Yuan, Xiang and Tang, Lei and Wang, Peng and Chen, Zhigang and Zou, Yichao and Su, Xiaofeng and Zhang, Cheng and Liu, Yanwen and Wang, Weiyi and Liu, Cong and Chen, Fansheng and Zou, Jin and Zhou, Peng and Hu, Weida and Xiu, Faxian (2015) Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe. Nano Research, 8 (10). pp. 3332-3341. ISSN 1998-0124

Abstract

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm2/(V·s) by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 µW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 µs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices. call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm2/(V·s) by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 µW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 µs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.

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Item Type:	Article (Commonwealth Reporting Category C)
Refereed:	Yes
Item Status:	Live Archive
Additional Information:	Published version cannot be displayed due to copyright restrictions.
Faculty / Department / School:	No Faculty
Date Deposited:	13 Jun 2017 05:58
Last Modified:	27 Jun 2017 02:26
Uncontrolled Keywords:	GaTe; imaging; p-n junction; photodiode; photosensor; wafer-scale two-dimensional materials
Fields of Research :	03 Chemical Sciences > 0303 Macromolecular and Materials Chemistry > 030399 Macromolecular and Materials Chemistry not elsewhere classified
Socio-Economic Objective:	E Expanding Knowledge > 97 Expanding Knowledge > 970103 Expanding Knowledge in the Chemical Sciences
Identification Number or DOI:	10.1007/s12274-015-0833-8
URI:	http://eprints.usq.edu.au/id/eprint/31676

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