Planar Vacancies in Sn1-xBixTe Nanoribbons

Zou, Yi-Chao and Chen, Zhi-Gang and Kong, Fantai and Lin, Jing and Drennan, John and Cho, Kyeongjae and Wang, Zhongchang and Zou, Jin (2016) Planar Vacancies in Sn1-xBixTe Nanoribbons. ACS Nano, 10 (5). pp. 5507-5515. ISSN 1936-0851

Abstract

Vacancy engineering is a crucial approach to manipulate physical properties of semiconductors. Here, we demonstrate that planar vacancies are formed in Sn1-xBixTe nanoribbons by using Bi dopants via a facile chemical vapor deposition. Through combination of sub-angstrom-resolution imaging and density functional theory calculations, these planar vacancies are found to be associated with Bi segregations, which significantly lower their formation energies. The planar vacancies exhibit polymorphic structures with local variations in the lattice relaxation level, determined by their proximity to the nanoribbon surface. Such polymorphic planar vacancies, in conjunction with Bi dopants, trigger distinct localized electronic states, offering platforms for device applications of ternary chalcogenide materials.


Statistics for USQ ePrint 31667
Statistics for this ePrint Item
Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Files associated with this item cannot be displayed due to copyright restrictions.
Faculty / Department / School: No Faculty
Date Deposited: 21 Jun 2017 01:52
Last Modified: 21 Jun 2017 01:52
Uncontrolled Keywords: chalcogenides; density functional theory; nanoribbon; scanning transmission electron microscopy; thermoelectric; vacancy; Angstrom resolution; localized electronic state; nanoribbon; polymorphic structure; scanning transmission electron microscopy; Ternary chalcogenides; tin and alloys; optical devices and systems; nanotechnology;
Fields of Research : 09 Engineering > 0912 Materials Engineering > 091299 Materials Engineering not elsewhere classified
Socio-Economic Objective: E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering
Identification Number or DOI: 10.1021/acsnano.6b01953
URI: http://eprints.usq.edu.au/id/eprint/31667

Actions (login required)

View Item Archive Repository Staff Only