Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets

Zhang, Enze and Wang, Peng and Li, Zhe and Wang, Haifeng and Song, Chaoyu and Huang, Ce and Chen, Zhi-Gang ORCID: https://orcid.org/0000-0002-9309-7993 and Yang, Lei and Zhang, Kaitai and Lu, Shiheng and Wang, Weiyi and Liu, Shanshan and Fang, Hehai and Zhou, Xiaohao and Yan, Hugen and Zou, Jin and Wan, Xiangang and Zhou, Peng and Hu, Weida and Xiu, Faxian (2016) Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets. ACS Nano, 10 (8). pp. 8067-8077. ISSN 1936-0851


Atomically thin 2D-layered transition-metal dichalcogenides have been studied extensively in recent years because of their intriguing physical properties and promising applications in nanoelectronic devices. Among them, ReSe2 is an emerging material that exhibits a stable distorted 1T phase and strong in-plane anisotropy due to its reduced crystal symmetry. Here, the anisotropic nature of ReSe2 is revealed by Raman spectroscopy under linearly polarized excitations in which different vibration modes exhibit pronounced periodic variations in intensity. Utilizing high-quality ReSe2 nanosheets, top-gate ReSe2 field-effect transistors were built that show an excellent on/off current ratio exceeding 107 and a well-developed current saturation in the current-voltage characteristics at room temperature. Importantly, the successful synthesis of ReSe2 directly onto hexagonal boron nitride substrates has effectively improved the electron motility over 500 times and the hole mobility over 100 times at low temperatures. Strikingly, corroborating with our density-functional calculations, the ReSe2-based photodetectors exhibit a polarization-sensitive photoresponsivity due to the intrinsic linear dichroism originated from high in-plane optical anisotropy. With a back-gate voltage, the linear dichroism photodetection can be unambiguously tuned both in the electron and hole regime. The appealing physical properties demonstrated in this study clearly identify ReSe2 as a highly anisotropic 2D material for exotic electronic and optoelectronic applications.

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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Files associated with this item cannot be displayed due to copyright restrictions.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 05 Jun 2017 22:33
Last Modified: 27 Jun 2017 02:25
Uncontrolled Keywords: Anisotropy; Linear dichroism photodetection; ReSe2; Ambipolar; Hexagonal boron nitride; Layered transition metal dichalcogenides; Nanoelectronic devices; Optoelectronic applications; Photo detection; Polarization sensitive; ReSe2; Metallurgy and Metallography; Semiconducting Materials; Semiconductor Devices and Integrated Circuits; Computer Circuits; Light and Optics; Nanotechnology; Physical Properties of Gases, Liquids and Solids; Atomic and Molecular Physics; Solid State Physics; Crystal Lattice
Fields of Research (2008): 10 Technology > 1007 Nanotechnology > 100705 Nanoelectronics
Fields of Research (2020): 40 ENGINEERING > 4018 Nanotechnology > 401804 Nanoelectronics
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970110 Expanding Knowledge in Technology
Identification Number or DOI: https://doi.org/10.1021/acsnano.6b04165
URI: http://eprints.usq.edu.au/id/eprint/31663

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