Zou, Yi-Chao and Chen, Zhi-Gang and Kong, Fantai and Zhang, Enze and Drennan, John and Cho, Kyeongjae and Xiu, Faxian and Zou, Jin (2016) Surface-energy engineered Bi-doped SnTe nanoribbons with weak antilocalization effect and linear magnetoresistance. Nanoscale, 8 (46). 19383-19389 . ISSN 2040-3364
Abstract
The rational design of semiconductor nanocrystals with well-defined surfaces is a crucial step towards the realization of next-generation photodetectors, and thermoelectric and spintronic devices. SnTe nanocrystals, as an example, are particularly attractive as a type of topological crystalline insulator, where surface facets determine their surface states. However, most of the available SnTe nanocrystals are dominated by thermodynamically stable {100} facets, and it is challenging to grow uniform nanocrystals with {111} facets. In this study, guided by surface-energy calculations, we employ a chemical vapour deposition approach to fabricate Bi doped SnTe nanostructures, in which their surface facets are tuned by Bi doping. The obtained Bi doped SnTe nanoribbons with distinct {111} surfaces show a weak antilocalization effect and linear magnetoresistance under high magnetic fields, which demonstrate their great potential for future spintronic applications.
|
Statistics for this ePrint Item |
| Item Type: | Article (Commonwealth Reporting Category C) |
|---|---|
| Refereed: | Yes |
| Item Status: | Live Archive |
| Additional Information: | Published version cannot be displayed due to copyright restrictions. |
| Faculty/School / Institute/Centre: | No Faculty |
| Date Deposited: | 12 Apr 2017 00:11 |
| Last Modified: | 04 Mar 2019 01:45 |
| Uncontrolled Keywords: | chemical vapor deposition; interfacial energy; magnetoelectronics; magnetoresistance; nanocrystals; nanoribbons; semiconductor devices; semiconductor doping; chemical vapour deposition; crystalline insulators; high magnetic fields; linear magnetoresistance; semiconductor nanocrystals; spintronic applications; thermodynamically stable; weak antilocalization; narrow band gap semiconductors |
| Fields of Research : | 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials |
| Socio-Economic Objective: | E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering |
| Funding Details: | |
| Identification Number or DOI: | 10.1039/c6nr07140f |
| URI: | http://eprints.usq.edu.au/id/eprint/30853 |
Actions (login required)
 |
Archive Repository Staff Only |