Surface-energy engineered Bi-doped SnTe nanoribbons with weak antilocalization effect and linear magnetoresistance

Zou, Yi-Chao and Chen, Zhi-Gang and Kong, Fantai and Zhang, Enze and Drennan, John and Cho, Kyeongjae and Xiu, Faxian and Zou, Jin (2016) Surface-energy engineered Bi-doped SnTe nanoribbons with weak antilocalization effect and linear magnetoresistance. Nanoscale, 8 (46). 19383-19389 . ISSN 2040-3364

Abstract

The rational design of semiconductor nanocrystals with well-defined surfaces is a crucial step towards the realization of next-generation photodetectors, and thermoelectric and spintronic devices. SnTe nanocrystals, as an example, are particularly attractive as a type of topological crystalline insulator, where surface facets determine their surface states. However, most of the available SnTe nanocrystals are dominated by thermodynamically stable {100} facets, and it is challenging to grow uniform nanocrystals with {111} facets. In this study, guided by surface-energy calculations, we employ a chemical vapour deposition approach to fabricate Bi doped SnTe nanostructures, in which their surface facets are tuned by Bi doping. The obtained Bi doped SnTe nanoribbons with distinct {111} surfaces show a weak antilocalization effect and linear magnetoresistance under high magnetic fields, which demonstrate their great potential for future spintronic applications.


Statistics for USQ ePrint 30853
Statistics for this ePrint Item
Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Published version cannot be displayed due to copyright restrictions.
Faculty / Department / School: No Faculty
Date Deposited: 12 Apr 2017 00:11
Last Modified: 30 Nov 2017 05:06
Uncontrolled Keywords: chemical vapor deposition; interfacial energy; magnetoelectronics; magnetoresistance; nanocrystals; nanoribbons; semiconductor devices; semiconductor doping; chemical vapour deposition; crystalline insulators; high magnetic fields; linear magnetoresistance; semiconductor nanocrystals; spintronic applications; thermodynamically stable; weak antilocalization; narrow band gap semiconductors
Fields of Research : 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials
Socio-Economic Objective: E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering
Funding Details:
Identification Number or DOI: 10.1039/c6nr07140f
URI: http://eprints.usq.edu.au/id/eprint/30853

Actions (login required)

View Item Archive Repository Staff Only