Surface-energy engineered Bi-doped SnTe nanoribbons with weak antilocalization effect and linear magnetoresistance

Zou, Yi-Chao and Chen, Zhi-Gang ORCID: and Kong, Fantai and Zhang, Enze and Drennan, John and Cho, Kyeongjae and Xiu, Faxian and Zou, Jin (2016) Surface-energy engineered Bi-doped SnTe nanoribbons with weak antilocalization effect and linear magnetoresistance. Nanoscale, 8 (46). pp. 19383-19389. ISSN 2040-3364


The rational design of semiconductor nanocrystals with well-defined surfaces is a crucial step towards the realization of next-generation photodetectors, and thermoelectric and spintronic devices. SnTe nanocrystals, as an example, are particularly attractive as a type of topological crystalline insulator, where surface facets determine their surface states. However, most of the available SnTe nanocrystals are dominated by thermodynamically stable {100} facets, and it is challenging to grow uniform nanocrystals with {111} facets. In this study, guided by surface-energy calculations, we employ a chemical vapour deposition approach to fabricate Bi doped SnTe nanostructures, in which their surface facets are tuned by Bi doping. The obtained Bi doped SnTe nanoribbons with distinct {111} surfaces show a weak antilocalization effect and linear magnetoresistance under high magnetic fields, which demonstrate their great potential for future spintronic applications.

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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Published version cannot be displayed due to copyright restrictions.
Faculty/School / Institute/Centre: No Faculty
Faculty/School / Institute/Centre: No Faculty
Date Deposited: 12 Apr 2017 00:11
Last Modified: 04 Mar 2019 01:45
Uncontrolled Keywords: chemical vapor deposition; interfacial energy; magnetoelectronics; magnetoresistance; nanocrystals; nanoribbons; semiconductor devices; semiconductor doping; chemical vapour deposition; crystalline insulators; high magnetic fields; linear magnetoresistance; semiconductor nanocrystals; spintronic applications; thermodynamically stable; weak antilocalization; narrow band gap semiconductors
Fields of Research (2008): 09 Engineering > 0912 Materials Engineering > 091205 Functional Materials
Fields of Research (2020): 40 ENGINEERING > 4016 Materials engineering > 401605 Functional materials
Socio-Economic Objectives (2008): E Expanding Knowledge > 97 Expanding Knowledge > 970109 Expanding Knowledge in Engineering
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