Analysis of optical pulse’s position effect on temporal response characteristics of GaAs metal-semiconductor-metal photodetector

Habibpour, Atefeh and Das, Narottam (2015) Analysis of optical pulse’s position effect on temporal response characteristics of GaAs metal-semiconductor-metal photodetector. World Applied Sciences Journal, 33 (9). pp. 1440-1445. ISSN 1818-4952


Photocurrents in a GaAs metal-semiconductor-metal (MSM) photodetector have been numerically modelled as a function of optical pulse’s position in a one-dimensional structure using Ambipolar transport theory and discrete Fourier transform method. The modelled results represent the carriers’ concentrations as well as the maximum value of the photocurrents that pass through the device when the optical pulse position changes on the device active region (i.e., the region between two top contacts). The simulation has been performed at low level injection of the excess carriers (i.e., photo-carriers) and with no bias voltage applied to the photodetector in equilibrium condition. The numerical simulation results show that for optical pulse position in the cathode region, the magnitude of the photocurrent is exactly the same but opposite direction of the anode region. The response of the photodetector is ‘zero’ when a pulse is positioned at the center of the active region. This important feature of the device could make it attractive for micro-scale positioning of high sensitive devices. The modelled results are qualitatively agreed with the experimentally observed behavior of the device.

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Item Type: Article (Commonwealth Reporting Category C)
Refereed: Yes
Item Status: Live Archive
Additional Information: Permanent restricted access to published version in accordance with the copyright policy of the publisher.
Faculty/School / Institute/Centre: Current - Faculty of Health, Engineering and Sciences - School of Mechanical and Electrical Engineering
Date Deposited: 22 Apr 2016 01:54
Last Modified: 15 Sep 2017 00:04
Uncontrolled Keywords: ambipolar transport theory; discrete fourier transform method; equilibrium condition; metal-semiconductor- metal (MSM) photodetector; numerical modelling
Fields of Research : 09 Engineering > 0906 Electrical and Electronic Engineering > 090699 Electrical and Electronic Engineering not elsewhere classified
Socio-Economic Objective: B Economic Development > 89 Information and Communication Services > 8999 Other Information and Communication Services > 899999 Information and Communication Services not elsewhere classified
Identification Number or DOI: 10.5829/idosi.wasj.2015.33.09.288

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